Wo2015064157a1 Methodology For Manufacturing Cu-ga Alloy Sputtering Goal

Device-level modeling exams of Cd Te photo voltaic cells integrating our outcomes indicate that the best efficiency is achieved with InGaO3 appearing both as a buffer layer and TCO. Finally, our results suggest that alloys of In2O3 and Ga2O3 could also be enticing alternatives to MgxZn1-xO for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film photo voltaic cells. Cu and Ga had been alloyed in the identical method as in Example 1 besides that the typical particle dimension of the Cu powder was 30 μm. As a end result, the presence of a γ 3 section, a γ 2 section, a Cu solid resolution section, and a pure Cu section was confirmed.

For example, gallium nitride 405 nm diode lasers are used as a violet gentle supply for higher-density Blu-ray Disc compact knowledge disc drives. Its by-product standing implies that gallium production is constrained by the quantity of bauxite, sulfidic zinc ores extracted per yr. Therefore, its availability must be discussed by way of supply potential. The supply potential of a by-product is defined as that quantity which is economically extractable from its host supplies per yr under present market conditions (i.e. technology and price). Reserves and assets usually are not related for by-products, since they can’t be extracted independently from the main-products.

The improvement of gallium arsenide as a direct bandgap semiconductor within the Nineteen Sixties ushered in the most important stage within the functions of gallium. In 1978, the electronics industry used gallium to fabricate light emitting diodes, photovoltaics and semiconductors, while the metals business used it to scale back the melting level of alloys. A Cu—Ga alloy powder was prepared in the identical method as in Example 1, and then vistaprint lularoe the Cu—Ga alloy powder was analyzed by EPMA in the identical method as in Example 1. Next, the production methodology of the Cu—Ga alloy sputtering target of the present invention shall be described in additional detail by means of examples. However, the current invention just isn’t restricted to these examples and does not depart from the gist of the current invention.

The container materials is chosen from the viewpoints of heat resistance in opposition to heating and suppression of adhesion of Ga and Cu—Ga alloys. Examples of the container embrace glass containers similar to borosilicate glass and quartz glass, ceramic containers such as alumina and zirconia, Teflon resin containers, Teflon coated containers, and enamel containers. For the mixing and alloying of Cu powder and Ga, a mixing system by which a stirrer such as a stirring blade or a stirring blade strikes in the container can be utilized.

The common particle diameter of the obtained Cu—Ga alloy powder was 59 μm. Further, Cu—Ga alloy powder was embedded in a resin, and after cross-sectional sharpening, analysis by EPMA confirmed the presence of a γ 2 section, a Cu stable answer part, and a pure Cu part. Except that the average particle measurement of the Cu powder was 5 μm, the alloying temperature was a hundred and ten ° C., the alloying time was 60 minutes, and no mixing / pulverization was performed, the identical situations as in Example 1 were adopted.

In conclusion, this research offers a framework for exploring and optimizing alternative contact layer supplies, which can prove critical to the success of recent PV absorbers. Thus, by pulverizing the Cu—Ga alloyed product, the typical particle diameter of the Cu—Ga alloy powder may be adjusted to 10 μm to forty five μm, and a high-density Cu—Ga alloy sputtering goal can be produced. The blended powder during which Cu powder and Ga are blended on the atomic weight ratio described above is alloyed by stirring at a temperature of 110 ° C. Specifically, the Cu powder and Ga pieces weighed at the atomic weight ratio described above are put right into a mixing apparatus, the atmosphere is evacuated, and then heated to one hundred ten ° C.

As a outcome, the presence of a γ 3 part, a γ 2 part, and a pure Cu phase was confirmed. Using a Cu—Ga alloy powder, sintering was carried out in a vacuum at 750 ° C. A Cu—Ga alloy powder was ready in the same method as in Example 5, and then the Cu—Ga alloy powder was analyzed by EPMA in the identical manner as in Example 1. As a end result, a γ three section and a γ 2 section were obtained.

The gacu alloy is also referred to as an alloy of some completely different parts. The environment for pulverizing the Cu—Ga alloyed product is preferably an air or an inert gas atmosphere such as Ar. A ball mill can be utilized as an apparatus for pulverization. Balls used within the ball mill can be Al 2 O 3 , ZrO 2 , SUS balls or SUS balls coated with Teflon , and have a diameter of about 5 mm to twenty mm. When a ball mill is used, the rotation speed is about 50 rpm to 250 rpm. First, a technique for producing a Cu—Ga alloy powder shall be described.

The common particle diameter of the obtained Cu—Ga alloy powder was 10 μm. Further, Cu—Ga alloy powder was embedded in the resin, and after cross-sectional sharpening, evaluation by EPMA confirmed the presence of a θ part, a γ three part, and a pure Cu phase. The obtained Cu—Ga alloy powder was embedded in a resin, subjected to cross-sectional sprucing, and then analyzed by EPMA. As a result, the presence of γ 3 part, γ 2 part, γ 1 part, Cu strong resolution phase, and pure Cu phase was confirmed. Cu and Ga had been alloyed in the same manner as in Example 1 except that the typical particle dimension of the Cu powder was 23 μm and no mixing / pulverization was carried out.

limiting within the shape of a rubber mildew, A flat sort thing and a cylindrical sort factor are applicable. In addition to a ball mill, a jet mill, a hammer mill, or the like can be used for pulverization. Moreover, it might possibly also grind